bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping m7 47 10 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtc144vet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtc144vet1g ldtc144vet3g m7 47 10 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) 3 collec t or 2 emitter 1 base r1 r2 limits parameter symbol unit supply voltage input voltage output current power dissipation junction temperature storage temperature parameter symbol min. typ. max. unit conditions input voltage output voltage input current output current input resistance dc current gain resistance ratio transition frequency ? characteristics of built-in transistor p d tj tstg 50 ? 10 to + 40 30 100 200 150 ? 55 to + 150 v v ma mw c c v cc v in i o i c(max.) ? ? ? ? 33 ? 32.9 ? 0.1 ? ? ? 250 47 1 0.3 0.16 0.5 ? ? 61.1 v v ma a ? mhz k ? v cc = 5v , i o = 100 a 6 v o = 0.3v , i o = 2ma i o = 10ma , i i = 0.5ma v i = 5v v cc = 50v , v i = 0v i o = 5ma , v o = 5v v ce = 10v , i e = ? 5ma , f = 100mhz ? ? 0.17 0.21 0.26 v i(off) v o(on) i i i o(off) g i f t r 1 v i(on) r 2 /r 1 ? ? ? ? 1 2 3 sc-89
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldtc144vet1g 50 20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m ta = 25 c v o = 0.3v fig.1 input voltage vs. output current (on characteristics) input voltage : v i(on) (v) output current : i o (a) 10m 5m 2m 1m 500 200 100 50 20 5 10 2 1 23 4 5 fig.2 output current vs. input voltage (off characteristics) output current : i o (a) input voltage : v i(off) i (v) ta = 25 c v cc = 5v 500 1000 200 100 50 20 10 5 2 1 100 200 500 1m 2m 5m 10m 20m 50m 100m ta = 25 c v o = 5v fig.3 dc current gain vs. output current dc current gain : g i output current : i o (a) 500m 1 200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m 2m 5m 10m 20m 50m 100m ta = 25 c i o /i i = 20 fig.4 output voltage vs. output current out put voltage : v o(on) (v) output current : i o (a)
3/3 ldtc144vet1g leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
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